NE6510179A
APPLICATION CIRCUIT (1.93-1.99 GHz)
V G
V D
GND
GND
C3
C9
C11
P1
C13
J3
J4
C12
C2
C8
C10
RF IN
J1
R1
C1
J2
RF OUT
C5
100637
C6
C4
U1
NE65XXX79A-EV
Contact CEL Engineering for artwork
and more detailed information.
V G
J3
.034
J4
V D
C13 C11
C9
C3
L = .890
W = .010
L = .874
W = .010
C2
C8
C10
C12
R1
J1
RF Input
C5
L = .280
W = .050
NE6510179A
C4
L = .260
W = .050
C1
J2
RF Output
1
4
TF-100637
TEST CIRCUIT BLK
2-56 X 3/16 PHILLIPS PAN HEAD
17
16
2
1
1
1
2
1
1
2
2
2
1
1
1
2
MA101J
MCR03J200
100A6RBCP150X
100A4R3CP150X
100A240CP150X
100A4R7CP150X
100A1RBCP150X
TAJB475K010R
GRM40X7R104K025BL
GRM40C0G102J050BD
NE6510179A
703401
1250-003
2052-5636-02
C2, C3
R1
C14 NOT USED
C4
C5. C1
C6
C7 NOT USED
C12, C13
C10, C11
C8, C9
U1
P1
J3, J4
J1, J2
CASE 1 100 pF CAP MURATA
0603 20 OHM RESISTOR ROHM
CASE A 6.8 pF CAP ATC
CASE A 4.3 pF CAP ATC
CASE A 24 pF CAP ATC
CASE A 4.7 pF CAP ATC
CASE A 1.8 pF CAP ATC
CASE B 4.7 μ F CAP AVX
0805 .1 μ F CAP MURATA
0805 1000 pF CAP MURATA
IC NEC
GROUND LUG CONCORD
FEEDTHRU MURATA
FLANGE MOUNT JACK RECEPTACLE
15
14
13
12
11
10
9
8
7
6
5
4
3
2
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相关代理商/技术参数
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NE651R479A 功能描述:射频GaAs晶体管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
NE651R479A-A 功能描述:射频GaAs晶体管 L&S Band GaAs HJFET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
NE651R479A-EVPW19 功能描述:射频GaAs晶体管 For NE651R479A-A Power at 1.9 GHz RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
NE651R479A-EVPW24 功能描述:射频GaAs晶体管 For NE651R479A-A Power at 2.4 GHz RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: